(09-0619) Dr. Hagen Klauk, COPE Seminar Series

*********************************
There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
*********************************

Event Details
  • Date/Time:
    • Friday June 19, 2009 - Saturday June 20, 2009
      11:00 am - 11:59 am
  • Location: G011 MS&E Bldg
  • Phone:
  • URL:
  • Email:
  • Fee(s):
    N/A
  • Extras:
Contact
Shirley Tomes
Chemistry & Biochemistry
Contact Shirley Tomes
404-894-0591
Summaries

Summary Sentence: Dr. Hagen Klauk, Max Planck Institute

Full Summary: Dr. Hagen Klauk, Max Planck Institute for Solid State Research, Stuttgart, Germany Organic Nanoelectronics COPE Seminar Series

Dr. Hagen Klauk, Max Planck Institute for Solid State Research, Stuttgart, Germany

Organic Nanoelectronics

COPE Seminar Series

Systems on Plastic (SoP), such as flexible displays, require fieldâ€'effect transistors that can be manufactured at temperatures below about 150 °C, to be compatible with plastic substrates. Such lowâ€'temperature transistors can be made using conjugated organic semiconductors, semiconducting carbon nanotubes, or inorganic semiconducting nanowires. However, most organic transistors and many of the nanotube and nanowire transistors developed to date employ relatively thick gate dielectrics with a capacitance typically below 0.3 µF/cm2, so the transistors usually require operating voltages of more than 5 V. In order to take full advantage of lowâ€'voltage (<3 V), highâ€'efficiency (>100 lm/W) organic lightâ€'emitting diodes (OLEDs) for the realization of ultraâ€'lowâ€'power flexible emissive displays, fieldâ€'effect transistors that can be operated with 3 V or less are needed. This requires a lowâ€'temperatureâ€'processable gate dielectric with a capacitance greater than about 0.5 µF/cm2. A promising approach is the combination of a thin plasmaâ€'grown metal oxide and a molecular self-assembled monolayer. These hybrid dielectrics are prepared at temperatures below 100 °C, have a thickness of about 5 to 6 nm (depending on the plasma power and the choice of the selfâ€'assembling molecules), and provide a capacitance close to 1 µF/cm2 that allows transistors as well as unipolar and complementary logic circuits based on organic semiconductors, carbon nanotubes, and inorganic nanowires to operate with voltages between 2 and 3 V.

Related Links

Additional Information

In Campus Calendar
No
Groups

School of Chemistry and Biochemistry

Invited Audience
No audiences were selected.
Categories
Seminar/Lecture/Colloquium
Keywords
theoretical chemistry
Status
  • Created By: Shirley Tomes
  • Workflow Status: Published
  • Created On: Jun 8, 2009 - 8:00pm
  • Last Updated: Oct 7, 2016 - 9:50pm