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There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
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Title: Modeling and benchmarking of spintronic devices for memory and in-memory compute applications
Committee:
Dr. Naeemi, Advisor
Dr. Davis, Chair
Dr. Khan
Abstract: The objective of the proposed research is to model and benchmark spintronic devices from materials and devices to circuits and application-level. We present a comprehensive model for spin current generation and transport in spin-orbit torque (SOT) devices while considering various nanoscale effects such as incomplete current redistribution, interface scattering, and local variation in material properties. We also provide a thickness optimization metric for SOT layer, quantifying it in terms of its resistivity and spin diffusion length. At the device-level, we evaluate various trade-offs among write current, time, and error rate for SOT-MRAM based on experimentally validated micromagnetic simulations. Moreover, we discuss about area saving schemes for SOT-MRAM based on voltage-controlled magnetic anisotropy (VCMA) effect and spin-transfer torque (STT). We study the read performance of SOT-MRAM array and quantify it in terms of oxide thickness. We benchmark the area and write performance of SOT-MRAM based memory arrays against other competing memories such as STT-MRAM, magneto-electric (ME) MRAM, and SRAM. Finally, at the application-level, we propose novel ternary content addressable memory (TCAM) based on SOT and magneto-electric (ME) effect and benchmark their area and search/write performance against TCAMs based on other technologies such as STT, SRAM, and FeFET.
