Alan Doolitte's AlN Semiconductor device close up

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Alan Doolitte's AlN Semiconductor device close up

Georgia Tech’s AlN-based semiconductor has the highest bandgap ever demonstrated to have both p and n-type conduction needed for electronics.

Additional Information

Groups

School of Electrical and Computer Engineering

Categories
Institute and Campus, Research, Engineering, Nanotechnology and Nanoscience
Keywords
Alan Doolittle, Aluminum Nitride-based Semiconductor, ultra-wide bandgap (UWBG) semiconductors
Status
  • Created By: dwatson71
  • Workflow Status: Published
  • Created On: Aug 4, 2022 - 4:28pm
  • Last Updated: Aug 4, 2022 - 4:28pm