*********************************
There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
*********************************
Title: Ionizing radiation effects and damage mechanisms in SiGe BiCMOS technology
Committee:
Dr. Cressler, Advisor
Dr. Ansari, Chair
Dr. Yu
Abstract: The objective of the proposed research is to understand, model, and mitigate ionizing radiation damages in SiGe HBT devices and circuits for space applications. Radiation can interfere with the electronics of a spacecraft and cause damages from data corruption to mission failure. Therefore, it is important to understand the damage mechanisms and mitigate them. The proposed research will study 1) the effects of ambient temperature, particularly elevated temperature on radiation response, 2) provide an in-depth understanding of the damage mechanisms using a TCAD model, 3) investigate how a device response translates to circuit response, and 4) investigate an alternative source for radiation testing.
