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Title: The Response of Next-Generation SiGe BiCMOS Systems to Radiation in Space-borne Applications
Committee:
Dr. Cressler, Advisor
Dr. Ghalichechian, Chair
Dr. Ayazi
Abstract: The objective of the proposed research is to characterize, model, and mitigate the responses of state-of-the-art SiGe BiCMOS devices, circuits, and systems to the radiation and temperature in space. Ever-evolving space applications such as real-time weather monitoring, surveillance, and scientific research require innovation at the component level. At all levels, faster data rates and higher precision instrumentation is required. Accordingly, development of novel device, circuit, and system architectures are necessary to support increasing application-level demand. The proposed research will extend the existing understanding of radiation effects in SiGe BiCMOS in multiple fronts: 1) new radiation effects in existing technologies, 2) radiation effects in emerging semiconductor devices, 3) radiation effects in state-of-the-art circuit topologies, and 4) reliability concerns for operation over wide temperature ranges.
