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Title: Development of Low-Cost High-Efficiency Tunnel Oxide Passivated Contact Silicon Solar Cells
Committee:
Dr. Ajeet Rohatgi, ECE, Chair, Advisor
Dr. , Co-Advisor
Dr. Bernard Kippelen, ECE
Dr. Benjamin Klein, ECE
Dr. Thomas Gaylord, ECE
Dr. Juan-Pablo Correa-Baena, MSE
Abstract: The objective of this research is to achieve low-cost high-efficiency (>23%) commercial ready bifacial screen-printed n-type Si solar cells through a combination of fundamental understanding, modeling and design, technology innovations, and complete cell fabrication. This research involves developing a technology roadmap by device modeling and simulations to achieve > 23% efficiency target followed by development and implementation of required design features such as optimized boron emitter on front and tunnel oxide passivated contact (TOPCon) on the rear side of an n-type silicon wafer, in combination with advanced fine-line screen-printing metallization with floating busbars to attain the efficiency target. Carrier-selective passivating contacts consist of material structures in-between of c-Si and metal electrode, which effectively reduce electron-hole recombination through defect states at the c-Si surface while working as contacts to extract either electrons or holes from the c-Si absorber. A next-generation industry-compatible double-side passivated contacts solar cell structure is also proposed. This cell structure is composed of full area p-TOPCon on the rear and selective area n-TOPCon on the front side of an n-type Si wafer. Detailed modeling using practically achievable material and device parameters shows that ~25.4% efficiency is achievable with this design using traditional screen-printing.
