Center for Compound Semiconductors Seminar

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Event Details
  • Date/Time:
    • Thursday February 24, 2011 - Friday February 25, 2011
      1:00 pm - 1:59 pm
  • Location: Bunger-Henry Building, Room 119
  • Phone:
  • URL:
  • Email:
  • Fee(s):
    N/A
  • Extras:
Contact
Andrea Cooper-Wimpye
School of Electrical and Computer Engineering
Contact Andrea Cooper-Wimpye
404-385-6095
Summaries

Summary Sentence: This seminar is hosted by the Center for Compund Semiconductors.

Full Summary: Speaker: Sylvain L. Delage Affiliation: III-V Lab (Marcoussis, France) Topic: "GaN-Based Technology for Power Microwave Applications"

Speaker: Sylvain L. Delage
Affiliation: III-V Lab (Marcoussis, France)
Topic: "GaN-Based Technology for Power Microwave Applications"

Abstract:

An overview of some recent results obtained III-V Lab, a common Laboratory between Thales, Alcatel-Lucent and CEA-LETI, using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation offers a vision of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.

Additional Information

In Campus Calendar
No
Groups

School of Electrical and Computer Engineering

Invited Audience
No audiences were selected.
Categories
Seminar/Lecture/Colloquium
Keywords
Center for Compound Semiconductors, Georgia Tech, School of Electrical and Computer Engineering
Status
  • Created By: Jackie Nemeth
  • Workflow Status: Published
  • Created On: Feb 14, 2011 - 8:00pm
  • Last Updated: Oct 7, 2016 - 9:54pm