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Title: Using SiGe HBTs for Quantum Science at Deep Cryogenic Temperatures
Committee:
Dr. John Cressler, ECE, Chair , Advisor
Dr. Asif Khan, ECE
Dr. Martin Mourigal, Physics
Dr. Nelson Lourenco, ECE
Dr. Dragomir Davidovic, Physics
Abstract: The objective of this research is to investigate the feasibility of using BiCMOS technology for these quantum science applications and clear some major roadblocks. The requirement for these applications is detailed, and the research is conducted in a systematic way targeting four important aspects of SiGe HBTs, namely, cryogenic characterizations, device physics, compact modeling, and circuit designs.
