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Title: Key Front-End Circuits In Millimeter-Wave Silicon-Based Wireless Transmitters For Phased-Array Applications
Committee:
Dr. Hua Wang, ECE, Chair , Advisor
Dr. Gee-Kung Chang, ECE
Dr. Farrokh Ayazi, ECE
Dr. John Cressler, ECE
Dr. Hossein Lavasani, Case Western Reserve Univ
Abstract: Key millimeter-wave (mm-Wave) front-end circuits are presented in this defense examination. Mm-Wave power amplifier (PA) design innovations are shown to address the PA challenges of achieving high efficiency and linearity simultaneously, such as a proposed harmonically tuned PA output network and a unique NMOS/PMOS PA structure. Additionally, the designed silicon-based PA designs can achieve wide bandwidth and ultra-compact size for future 5G communication applications. Moreover, a full-span 360 degree reflective-type phase shifter (RTPS) is proposed to provide several advantages, such as continuous phase shifting, no dc power consumption, full-span, low loss, over phase shifters in phased-array wireless communication systems.
