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There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
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Title: Wide-bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
Committee:
Dr. Alan Doolittle, ECE, Chair , Advisor
Dr. Bruno Frazier, ECE
Dr. Doug Yoder, ECE
Dr. Arijit Raychowdhury, ECE
Dr. Samuel Graham, ME
Abstract:
The III-nitride semiconductors are a promising material system to explore. There are many applications for the III-nitride materials, most notably in the form of commercial power electronics and optoelectronics, such as the white light emitting diode (LED). In this work, a combination of novel techniques, materials, and devices are explored to enhance III-nitride optoelectronics in a wide range of important wavelengths.
