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There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
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Metz, France | Posted: October 10, 2019
Andrea Gappell, Marketing Communications & Recruiting Manager, Georgia Tech-Lorraine
Summary Sentence:
Team from Georgia Tech-Lorraine, GT-CNRS UMI 2958, and Institut Lafayette in Metz, France, Publish Article in Advanced Materials Technologies
Full Summary:
No summary paragraph submitted.
Advanced Materials TechnologiesAbdallah Ougazzaden and co-authors, Taha Ayari, Suresh Sundaram, Chris Bishop, Adama Mballo, Phuong Vuong, Yacine Halfaya, Soufiane Karrrakchou, Simon Gautier, Paul Voss, and Jean Paul Salvestrini published an article entitled, “Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications,” in the journal, Advanced Materials Technologies (Adv. Mater. Technol. 10/2019). Researchers from Georgia Tech-Lorraine, GT-CNRS UMI 2958, and Insitut Lafayette collaborated on the paper. The authors acknowledge the French National Research Agency (ANR) under the GANEX Laboratory of Excellence (Labex) project for partially funding this study.
Advanced Materials Technologies is an international peer-reviewed journal that focuses on advanced engineering and device design aspects of materials systems for application in energy, healthcare, electronics, optics, microfluidics, food safety, sensors/biosensors, and environmental technology.
In article number 1900164 the team describes how III-Nitride based LEDs have been locally grown on h-BN and fabricated at a wafer-scale. This enables a simple, dicing-free, pick-and-place of the devices on a flexible substrate without performance degradation. The approach presented in the article is scalable on any wafer size, can be applied to other types of nitride-based devices, and can be compatible with commercial pick-and-place handlers for mass production.
With trends of technology disruption and acceleration in the electronics industry, the role of heterogeneous integration will prove important in emerging fields such as IoT, smart mobile, and intelligent automotive.
