*********************************
There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
*********************************
Title: Silicon-Based Ultra Efficient Mm-Wave and THz Power Generation and Signal Detection For Future Wireless Networks and IoT Devices
Committee:
Dr. Wang, Advisor
Dr. Cressler, Chair
Dr. Klein
Dr. Chang
Abstract:
The objective of the proposed research is to devise new silicon-based system topologies and circuit design methodologies for power generation and signal detection at the mm-Wave and THz frequency range. The proposed system presented here is intended for deployable internet-of-things devices and sensor networks where low power consumption and high efficiency are requirements for a practical implementation. As a proof-of-concept, a THz oscillator based low power miniature radio integrated with on-chip antennas is proposed. The THz low power radio is based on a reconfigurable fundamental oscillator array that can be used as a THz source in transmission mode and as a THz super-regenerative detector in receiver mode. These low-power miniaturized 2-way radios can be deployed to form highly collaborative networks that can establish neighbor-to-neighbor meter-scale communication. The links formed by the miniature radio nodes can extend and relay information supporting long-distance communication to a base-station located far away. In simulations, the proposed design achieves a maximum output power of 5.56dBm, at a center frequency of 150GHz, a receiver sensitivity of -80dBm, a DC power consumption of 38mW, and a DC-to-EIRP efficiency of 38.9%, which is the highest efficiency reported of all the silicon-based THz transceivers in the 150GHz range. The prototype chip was design using the GlobalFoundries 45nm silicon on insulator process and it occupies a total chip area of 2mm by 2mm.
