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Metz France | Posted: January 28, 2019
The ability to manipulate 2-D materials at the wafer scale is an important step on the path to industrialisable production of 2-D optoeletronics and nanoelectronic devices. A breakthrough reported in Science has been made by an international partnership demonstrating a novel technique that allows for waferscale separation of 2-D materials from their growth substrate in a few minutes, permitting fast fabrication cylcles lasting less than an hour. A second report, in Nature Materials, explores the feasibility of remote epitaxy for growth of arbitrary materials on 2-D layers. In this partnerhip, UMI GT-CNRS contributed its expertise in production of 2-D h-BN materials.
Collaborators include GT-CNRS UMI-2958 researchers, MIT, Sun Yat-Sen University, the University of Virginia, the University of Texas at Dallas, the U.S. Naval Research Laboratory, and Ohio State University and Yonsei University in South Korea.
The recent research results have been highlighted by CNRS (french language):
Des techniques pour manipuler des matériaux 2D et créer de nouveaux composants
For those interested in English language write-ups in the news, please try the following links.
Route to flexible electronics made from exotic materials
Researchers quickly harvest 2-D materials, bringing them closer to commercialization
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