SCS Lecture: Samira Khan

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Event Details
  • Date/Time:
    • Tuesday February 20, 2018 - Wednesday February 21, 2018
      11:00 am - 11:59 am
  • Location: KACB 1116W
  • Phone:
  • URL:
  • Email:
  • Fee(s):
    N/A
  • Extras:
Contact

Tess Malone, Communications Officer

tess.malone@cc.gatech.edu

Summaries

Summary Sentence: Samira Khan gives a lecture.

Full Summary: No summary paragraph submitted.

Media
  • Samira Khan Samira Khan
    (image/jpeg)

TITLE: Solving the DRAM Scaling Challenge 

ABSTRACT:

Technology scaling of DRAM cells has enabled higher capacity memory for the last few decades. Unfortunately, DRAM cells become vulnerable to failure as they scale down to a smaller size. Enabling high-performance, energy-efficient, scalable memory systems without sacrificing the reliability is a major research challenge. My work focuses on designing a scalable memory system by rethinking the traditional assumptions in abstraction and separation of responsibilities across system layers.

In this talk, I will discuss three fundamental ways to enable DRAM scaling. First, we can enable scaling by letting the manufacturers build smaller cells without providing any strict reliability guarantee.  I envision manufacturers shipping DRAMs without fully ensuring correct operation, and the system being responsible for detecting and mitigating DRAM failures while operating in the field. However, designing such a system is difficult due to intermittent DRAM failures. In this talk, I will discuss a system design capable of providing reliability guarantees even in the presence of intermittent failures. Second, we can enable high-capacity memory leveraging the emerging non-volatile memory technologies that are predicted to be more scalable. I will present my vision to redefine the hardware and operating system interface to unify memory and storage system with non-volatile memory and discuss the opportunities and challenges of such a system. Third, tolerating failures in the application can improve memory scalability. The fundamental challenge of such a system is how to ensure, verify, and quantify the quality of the results. I envision a system that limits the impact of memory failures such that it is possible to statically determine the worst-case results from the maximum possible error in the input.

BIO:

Samira Khan is an assistant professor at the University of Virginia (UVA). Prior to joining UVA, she was a post doctoral researcher at Carnegie Mellon University, funded by Intel Labs. Her research focuses on improving the performance, efficiency, and reliability of the memory system. She is the recipient of NSF CRII Award, NSF GOALI Award, and Rising Stars in EECS Award. She received her Ph.D. from the University of Texas at San Antonio. During her graduate studies, she worked at Intel, AMD, and EPFL.
 

Additional Information

In Campus Calendar
No
Groups

College of Computing, School of Computer Science

Invited Audience
Faculty/Staff, Public, Graduate students, Undergraduate students
Categories
Seminar/Lecture/Colloquium
Keywords
Samira Khan, lecture, memory, DRAM cells
Status
  • Created By: Tess Malone
  • Workflow Status: Published
  • Created On: Feb 14, 2018 - 4:17pm
  • Last Updated: Feb 14, 2018 - 4:48pm