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Title: Qualifying Silicon-germanium Electronics for Harsh Radiation Environments
Committee:
Dr. John Cressler, ECE, Chair , Advisor
Dr. Doug Yoder, ECE
Dr. Eric Vogel, MSE
Dr. Muhannad Bakir, ECE
Dr. Britney Schmidt, EAS
Abstract:
This work investigates silicon-germanium heterojunction bipolar transistors (SiGe HBTs) for radiation-intense applications and spaceflight hardware consideration. Both total ionizing dose and single-event effects are discussed. The first ever implementation of radiation-hardening-by-process (RHBP) in SiGe HBTs is presented. Experimental results and 3D modeling efforts from this research is leveraged to advance the use of two-photon absorption pulsed-laser experimentation in place of standard heavy-ion testing with a particle accelerator.
