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Title: A Stacked Betavoltaic Battery using a Lateral-growth-smoothed BGaN Intrinsic Region
Committee:
Dr. Abdallah Ougazzaden, ECE, Chair , Advisor
Dr. Paul Voss, ECE, Co-Advisor
Dr. Jean Paul Salvestrini, GTL
Dr. Alexandre Locquet, GTL
Dr. Bertrand Boussert, GTL
Dr. Nico Declercq, ME
Abstract:
An investigation into possible ways to increase the efficiency of
betavoltaic battery technology by using a novel material, BGaN, by
utilizing the stacking of PIN devices, and to research designs to
increase the radioactive source efficiency by reducing self-absorption.