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There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
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photo of Alan Doolittle | Posted: March 13, 2009
Summary Sentence:
Alan Doolittle receives WOCSEMMAD Most Valuable Contribution Awa
Full Summary:
W. Alan Doolittle received the Most Valuable Contribution Award at the Workshop on Compound Semiconductor Materials and Devices, which was held February 15-18 in Fort Myers, Fla.
Alan Doolittle received the Most Valuable Contribution Award at the Workshop on Compound Semiconductor Materials and Devices, which was held February 15-18 in Fort Myers, Fla. Dr. Doolittle was presented with this honor for his talk entitled "Metal Modulation Epitaxy - Redefining MBE of III-Nitrides."
In Dr. Doolittle's talk, he presented data showing a factor of 20-40 times higher improvement in GaN hole concentration, as compared to the previously accepted perceived "limit." This accomplishment will potentially lead to higher brightness light emitting diodes, laser diodes used in display and data storage applications, and possibly in the future, high power heterojunction bipolar transistors useful for wideband RF and microwave applications.
An associate professor in the School of Electrical and Computer Engineering, Dr. Doolittle is an associate professor in the microsystems and optics and photonics technical interest areas.
