*********************************
There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
*********************************
Title: Development and Characterization of III-Nitride Bipolar Devices
Committee:
Dr. Shyh-Chiang Shen, ECE, Chair , Advisor
Dr. Russel Dupuis, ECE
Dr. Douglas Yoder, ECE
Dr. Muhannad Bakir, ECE
Dr. Samuel Graham, ME
Abstract:
III-nitride (III-N) materials have been widely used in optical devices such as blue light-emitting diodes today. On the other hand, III-N power electronics are also promising for the next-generation high-voltage and high-power applications because of the high breakdown voltage, high power handling capability, and high-temperature operation capability. The research involves the current development of III-N bipolar devices at Georgia Tech. The device design, fabrication process development, and device characterization are focused on different III-N bipolar devices: (1) GaN homojunction p-i-n rectifiers achieve a breakdown voltage >800 V with an extremely low specific on-resistance of 0.28 mΩ-cm2. The temperature-dependent characteristics of GaN p-i-n rectifiers will also be discussed. (2) The InGaN/GaN avalanche phototransistors (APTs) developed at GT demonstrate high responsivity (>300 A/W) and high ultraviolet-to-visible-band rejection ratio (>8×103) under UV light illumination. (3) The development of UV light emitters is also presented in the research works, including optically pumped DUV laser, electrically pumped DUV light emitting diodes (LEDs) and UV resonant-cavity LEDs.
