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Title: Large-signal Reliability of Silicon-germanium Heterojunction Bipolar Transistor Amplifiers
Committee:
Dr. John Cressler, ECE, Chair , Advisor
Dr. John Papapolymerou, ECE
Dr. Hua Wang, ECE
Dr. Gregory Durgin, ECE
Dr. Samuel Graham, ME
Abstract:
This work focuses on the electrothermal impact of large RF voltage swings on SiGe HBTs used in LNA and PA circuits. Measurement data and simulation results are used to present a clear understanding of SiGe HBT reliability, and techniques are introduced to give circuit designers the tools necessary to optimize the performance-reliability trade-off in SiGe HBT amplifier designs.
