*********************************
There is now a CONTENT FREEZE for Mercury while we switch to a new platform. It began on Friday, March 10 at 6pm and will end on Wednesday, March 15 at noon. No new content can be created during this time, but all material in the system as of the beginning of the freeze will be migrated to the new platform, including users and groups. Functionally the new site is identical to the old one. webteam@gatech.edu
*********************************
Title: Spintronic Logic and Ferroelectric Memory for the Beyond CMOS Era
Committee:
Dr. Naeemi, Advisor
Dr. Davis, Chair
Dr. Mukhopadhyay
Abstract: The objective of this proposal is to explore spintronic logic and ferroelectric memory as potential solutions to beyond complementary metal-oxide-semiconductor (CMOS) technologies, since devices based on ferromagnetism and ferroelectricity hold great promise for the next-generation non-volatile digital computing and storage. For spintronic logic, novel devices and interconnects using spin-transfer torque (STT) on ferromagnetic metals and spin diffusive transport through non-magnetic channel materials are proposed, and comprehensive physical models including spin injection, spin transport and stochastic magnetization dynamics are developed to justify the conceptual idea. On the other hand, recently ferroelectric tunnel junctions (FTJs) have been an active research topic in emerging memory technologies due to an extremely high on/off ratio originated from the giant tunneling electroresistance (TER) effect. Thus, a new theoretical approach comprising quantum transport and thermodynamics is proposed to describe FTJ I-V characteristics. Under this formalism, an FTJ with different contacts will be studied and thus the key factors of showing the high TER effect will be clarified.
