Discovery of New Form of Semiconducting Graphene

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Event Details
  • Date/Time:
    • Tuesday March 1, 2016 - Wednesday March 2, 2016
      10:00 am - 10:59 am
  • Location: Howey N110
  • Phone: (404) 894-8886
  • URL:
  • Email:
  • Fee(s):
    Free
  • Extras:
Contact

amorain@gatech.edu

Summaries

Summary Sentence: Discovery of New Form of Semiconducting Graphene

Full Summary: No summary paragraph submitted.

The goal of graphene electronics research has been to find a semiconducting form of graphene for use in devices. It has been recently shown that the buffer layer, the first layer of graphene on the SiC(0001) face, is a semiconductor with a band gap of >0.5eV. Now, two new semiconducting bands (with a band gap of >1.5eV) have been discovered which relate to a structured graphene geometry; metallic sidewall graphene nanoribbons seamlessly connect to a new form of semiconducting graphene, called terrace buffer. In this talk, we will present growth and structure data as well as ARPES measurements showing the new semiconducting graphene bands.  I will show what growth conditions lead to these new semiconducting bands.

Additional Information

In Campus Calendar
Yes
Groups

School of Physics

Invited Audience
Undergraduate students, Faculty/Staff, Graduate students
Categories
Seminar/Lecture/Colloquium
Keywords
School of Physics, seminar
Status
  • Created By: Alison Morain
  • Workflow Status: Published
  • Created On: Feb 23, 2016 - 5:16am
  • Last Updated: Apr 13, 2017 - 5:16pm