Professor John Cressler

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Professor John Cressler

Professor John Cressler led a Georgia Tech team that recently demonstrated the world's fastest silicon-based device to date, in collaboration with IHP-Innovations for High Performance Microelectronics in Germany. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz. (Georgia Tech Photo: Rob Felt)

Additional Information

Groups

Research Horizons

Categories
Engineering, Nanotechnology and Nanoscience, Research
Keywords
chip, silicon, silicon germanium, transistor
Status
  • Created By: John Toon
  • Workflow Status: Published
  • Created On: Dec 4, 2015 - 10:49am
  • Last Updated: Oct 7, 2016 - 10:49pm