Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

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Summaries

Summary Sentence:

We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC.

Full Summary:

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.

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Art Research
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Electronics and Nanotechnology, Materials
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Keywords
epitaxial graphene
Status
  • Created By: Gina Adams
  • Workflow Status: Published
  • Created On: Nov 15, 2013 - 10:02am
  • Last Updated: Oct 7, 2016 - 11:15pm