Atomic arrangement at a relaxed InGaN/GaN interface

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Atomic arrangement at a relaxed InGaN/GaN interface

Image caption: The atomic arrangement at a relaxed InGaN/GaN interface. Research at Arizona State University and Georgia Tech show layer-by-layer crystal growth may lead to recording breaking efficiencies in photovoltaic solar cell technology. Photo by: Arizona State University

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School of Electrical and Computer Engineering

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  • Created By: Jackie Nemeth
  • Workflow Status: Published
  • Created On: Dec 4, 2015 - 10:43am
  • Last Updated: Oct 7, 2016 - 10:48pm